Temperature Dependent Cathodoluminescence Characterization of Ultraviolet Emitting Films Grown by Pulsed Laser Deposition
نویسندگان
چکیده
Strontium sulfide (SrS) is known to have an indirect bandgap of ~ 4.32 eV. When doped with tellurium (Te), ultraviolet emission occurs at 360 nm (for Tes singlet) and 400nm (for TesTes dimers) due to radiative recombination from bound exciton states. In this paper we discuss the ultraviolet emission of pulsed laser deposited thin films of SrS:Te grown as SrS-Te and SrSTe-SrS multi-layer structures on Si substrates. The Te doping was incorporated by conventional diffusion into the SrS films. Temperature dependent ultraviolet emission measurements were taken and will be discussed along with results from microstructural and chemical characterization techniques.
منابع مشابه
Ultraviolet Emitting SrS:Te Thin Films
In the bulk SrS has an indirect bandgap of ~ 4.32 eV. When SrS is doped with tellurium, ultraviolet emission occurs at 360 nm (for singlet) and 400nm (for Te-Te dimers) due to recombination from bound exciton states. In this paper we discuss the ultraviolet emission of pulsed laser deposited thin films of SrS:Te grown at room temperature on Si. Deposited film thickness ranged from 0.1 – 1.5 μm,...
متن کاملDependence of Magnetic Properties on Laser Ablation Conditions for Epitaxial La_{0.6}Sr_{0.4}MnO_{3} Thin Films Grown by Pulsed Laser Deposition
Epitaxial La0:6Sr0:4MnO3 (LSMO) thin films were grown by pulsed laser deposition. Relationships between magnetic properties of LSMO epitaxial thin films and ablation conditions such as ablated spot area and total incident laser energy in a pulsed laser deposition technique were studied. Ablated spot area was controlled by changing the focus lens position and total laser energy. Epitaxial growth...
متن کاملA novel hybrid pulsed laser deposition/metalorganic vapour deposition method to form rare-earth activated GaN
A novel low-temperature method based on a combination of pulsed laser deposition and metalorganic chemical vapour deposition was used to fabricate GaN thin films doped with rare-earth (RE) ions. The films were deposited on GaN/Al2O3 substrates. The x-ray diffraction analysis of these GaN : RE (RE = Eu, Tb) samples showed that the films have the hexagonal phase of GaN and are polycrystalline wit...
متن کاملCharacteristics of high quality ZnO thin films deposited by pulsed laser deposition
Thin films of ZnO have been deposited on glass and silicon substrates by the pulsed laser deposition technique employing a KrF laser ~l5248 nm!. The influence of the deposition parameters, such as substrate temperature, oxygen pressure, and laser fluence on the properties of the grown films, has been studied. All the films grown over a rather wide range of deposition conditions were found to be...
متن کاملMössbauer and Magnetic Properties of Coherently Mixed Magnetite-Cobalt Ferrite Grown by Infrared Pulsed-Laser Deposition
We have studied the magnetic properties and the composition of cobalt ferrite single crystal films on SrTiO3 : Nb grown by infrared pulsed-laser deposition. Mössbauer spectra have been recorded from both the target used to grow the films and the films themselves. The Mössbauer spectra of the target taken at low temperatures show a strong dependence of the recoil free fraction of the octahedral ...
متن کامل